中文摘要：

该文基于忆阻器、忆容器和忆感器的物理模型与记忆机理,提出一种统一形式的记忆器件模型。在此基础上结合线性电压控制浮地阻抗（VCFI）电路与电流积分器,构建一种通用的记忆器件模拟器。该电路在拓扑结构保持不变的情况下,通过接入不同性质的元件能分别模拟忆阻器、忆容器和忆感器的电学行为。最后将提出的忆阻器、忆容器和忆感器分别替换RLC串联谐振电路中的电阻、电容和电感元件,并从时域和频域两方面研究了记忆器件对电路的影响。PSPICE仿真结果验证了该模拟器的可行性和有效性。

英文摘要：

Based on the physical models and memory mechanisms of memristor, memcapacitor and meminductor, this study proposes a unified form of mem-elements model. Then a universal emulator of mere-elements is implemented with linear Voltage Control Floating Impedance （VCFI） circuit and a current integrator. By the choice （resistor/capacitor/inductor） of different type components, the emulator can simulate the electrical behavior of memristor, memcapacitor, and meminductor, respectively. Finally, the proposed emulator is applied to RLC series resonant circuit, and the circuit influences of mem-elements from both the time domain and frequency domain are studied. PSPICE simulations verify that the correctness and effectiveness of the universal emulator.