采用磁控溅射法在Si衬底上制备了SiO_2介质膜,系统地研究了SiO_2膜引入对Ag纳米颗粒的表面覆盖率、形貌、形成机理和光学性质的影响.研究发现引入SiO_2介质膜后,Ag纳米颗粒的表面覆盖率显著增加,平均粒径明显降低.基于现有的Ag纳米颗粒形成机理,提出了粗糙表面Ag膜断裂模型以解释其形貌发生变化的原因.紫外-可见光分光光度计测试表明,引入SiO_2膜并优化其厚度,可使Ag纳米颗粒的偶极消光峰最大红移86nm,但消光峰强度明显下降.数值模拟计算表明,引入SiO_2膜的Ag纳米颗粒所能散射的光子数量最小减少2×10(18)个.因此,在Si衬底上沉积SiO_2膜,不利于Ag纳米颗粒陷光性能的提高.
The reflection characteristics of one-dimensional polyhasic photonic crystals by usingheterostructure were studied by transfer matrix method. The influence of the disorder of three elementcompound dielectric layers was mainly disscused. The results indicate that the heterostructure consists oftwo one-dimensional polyhasic photonic crystals with suitable photonic bandgap can substantially enlargeomnidirectional reflection frequency range. When the incident angle is in the range of 0-4 89%, the bandof total refection can be achieved from 0. 410w/w0to 0. 785w/wv. Completed with the two elementcompound dielectric layers, three element photonic crystals can decrease the influence of the disorderproduced in crystal preparation process. The results provide theoretical support for the preparation andapplication of wide-angle reflector invisible and infrared light band.