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Bi过量和Mn掺杂的钛酸铋钠基无铅压电陶瓷
  • 期刊名称:电子元件与材料, 25(4)1-3(2006)
  • 时间:0
  • 分类:TM282[电气工程—电工理论与新技术;一般工业技术—材料科学与工程]
  • 作者机构:[1]山东大学物理与微电子学院,山东济南250100
  • 相关基金:国家自然科学基金资助项目(50572056);山东省重点自然科学基金资助项目(Z2003F04)
  • 相关项目:具有高温居里点的铌钽酸盐无铅压电陶瓷的研究
中文摘要:

采用传统电子陶瓷制备工艺制备(1-y)(Na0.5Bi0.5)TiO3-yBa(ZrxTi1-x)O3无铅压电陶瓷,获得了d33高达185pC/N的0.94(Na0.5Bi0.5)TiO3-0.06Ba(Zr0.055Ti0.945)O3压电陶瓷.对Bi的挥发进行了补偿,添加过量Bi2O3(摩尔分数z=0.08)的钛酸铋钠基压电陶瓷,d33高达218pC/N。研究了Mn掺杂对钛酸铋钠基陶瓷压电、介电性能和损耗的影响,获得了高性能的无铅压电陶瓷,其中如3为214pC/N,k1为0.44,如3为0.52。

英文摘要:

Lead-free piezoelectric ceramics (1-y)(Na0.5Bi0.5)TiO3-yBa(ZrxTi1-x)O3 were fabricated using the conventional ceramics technique. The composition 0.94(Na0.5Bi0.5)TiO3-0.06Ba(Zr0.055Ti0.945)O3 is obtained with d33 as high as 185 pC/N. By means of compensating the volatilization of Bi2O3, (Na, Bi)TiO3 based ceramics doped with extra 0.08%(mole fraction) Bi2O3 can be obtained with d33 as high as 195 pC/N. The effects of doping Mn on the piezoelectric, dielectric constant and dielectric loss are investigated, and the acquired (Na, Bi)TiO3 based lead-free piezoelectric ceramics have optimal properties: d33=214 pC/N, kt = 0.44, k33 = 0.52.

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