采用传统电子陶瓷制备工艺制备(1-y)(Na0.5Bi0.5)TiO3-yBa(ZrxTi1-x)O3无铅压电陶瓷,获得了d33高达185pC/N的0.94(Na0.5Bi0.5)TiO3-0.06Ba(Zr0.055Ti0.945)O3压电陶瓷.对Bi的挥发进行了补偿,添加过量Bi2O3(摩尔分数z=0.08)的钛酸铋钠基压电陶瓷,d33高达218pC/N。研究了Mn掺杂对钛酸铋钠基陶瓷压电、介电性能和损耗的影响,获得了高性能的无铅压电陶瓷,其中如3为214pC/N,k1为0.44,如3为0.52。
Lead-free piezoelectric ceramics (1-y)(Na0.5Bi0.5)TiO3-yBa(ZrxTi1-x)O3 were fabricated using the conventional ceramics technique. The composition 0.94(Na0.5Bi0.5)TiO3-0.06Ba(Zr0.055Ti0.945)O3 is obtained with d33 as high as 185 pC/N. By means of compensating the volatilization of Bi2O3, (Na, Bi)TiO3 based ceramics doped with extra 0.08%(mole fraction) Bi2O3 can be obtained with d33 as high as 195 pC/N. The effects of doping Mn on the piezoelectric, dielectric constant and dielectric loss are investigated, and the acquired (Na, Bi)TiO3 based lead-free piezoelectric ceramics have optimal properties: d33=214 pC/N, kt = 0.44, k33 = 0.52.