利用射频磁控溅射方法制备了具有CoSi2成分的非晶薄膜,对非晶薄膜的晶化过程进行了原位X射线分析。结果显示,溅射态薄膜为非晶态,而自由能一成分曲线说明非晶态合金有较低自由能。在非晶晶化过程中初生相为CoSi相,其形成由有效形成热(EHF)因素和结构因素决定。随加热温度升高,非晶薄膜晶化最终得到晶体CoSi2薄膜。
Crystallization process of CoSi2 thin films prepared by radio frequency rnagnetron sputtering have been investigated by in situ X-ray diffraction. The results show that the as-deposited Co-Si film is amorphous. The gibbs free energy-composition curve proved that amorphous phase has lower Gibbs free energy. The first formed phase during crystallization is CoSi phase, its formation is determined by EHF (effective heat of formation) and structure factors. As the temperature was elevated, the amorphous thin film finally transformed to crystalline CoSi2.