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Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin
  • ISSN号：2045-2322
  • 期刊名称：Scientific Reports
  • 时间：2015.3.18
  • 页码：-
  • 相关项目：制备拥有三临界点的高性能外延无铅压电薄膜
作者： Yang, Guang|Yao, Jianjun|Viehland, Dwight|Yang, Yaodong|
同期刊论文项目
制备拥有三临界点的高性能外延无铅压电薄膜
期刊论文 13 会议论文 1
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