中文摘要：

以AlN薄膜为压电层,采用体硅微细加工工艺制备背空腔型结构薄膜体声波谐振器.材料测试结果表明,在优化溅射工艺下沉积的AlN薄膜具有（002）择优取向及良好的柱状晶结构.扫描电镜表征结果证实所制得空腔背部平滑且各向异性较好.用网络分析仪测试可知,所制得的谐振器具有较好的频率特性：谐振频率为2.537 GHz,机电耦合系数3.75%,串、并联品质因数分别为101.8、79.7.

英文摘要：

Film bulk acoustic resonator was fabricated in backside air-gap structure using Silicon bulk micromachining technique, with Aluminum nitride films as piezoelectric material. The measurement results show that the AlN films, deposited under optimized sputtering condition, were featured in （002） preferred orientation and well-textured columnar structure. The fashioned air-gap, characterized by scanning microscope, was confirmed with smooth surface on the back and good anisotropy. The fabricated resonator was measured using a network analyzer, and finally achieved a resonant frequency of 2. 537 GHz, effective electromechanical coupling coefficient （Keff^2） of 3. 75%, series quality （Qs） and parallel quality （Qp） of 101.8 and 79.7, respectively.