中文摘要：

采用传统陶瓷的制备方法，制备出Sb2O3掺杂的（Na0．84K0．16）0．5Bi0．5TiO3的无铅压电陶瓷。XRD分析表明，Sb2O3的掺杂量在0．1％～0．6％（质量分数）范围内都能够形成纯钙钛矿（ABO3）型固溶体。陶瓷材料的介电常数-温度曲线显示陶瓷在升温过程中存在两个介电常数温度峰，结合不同温度下的电滞回线观测，认为两个介电峰分别是材料的铁电-反铁电和反铁电-顺电相变，宽化的介电峰同时也表明所研究陶瓷具有驰豫铁电体特征。测试了不同组成陶瓷的压电性能，在Sb2O3掺杂量为0．1％时陶瓷的压电常数d33=124pC／N，为所研究组成中的最大值，平面机电耦合系数kp=24．87％，略有下降，材料的介电常数ε33^T／ε0和介质损耗tanδ则随掺杂量的增加而增加。

英文摘要：

Sb2O3 doped （Na0.84K0.16）0.5Bi0.5TiO3 lead-free piezoelectric ceramics were fabricated by traditional ceramic technique. XRD results show that all compositions can form pure perovskite solid solution in the range of 0.1 wt%-0.6 wt% Sb2O3, which means the Sb2O3 can enter into the lattice effectively. The dielectric constant vs temperature patterns show that there are two peaks in the heating process which corresponding to the ferroelectric-antiferroelectric and antiferroelectric-paraelectric phase transitions. The broader dielectric peaks also indicates the ceramics have relaxor ferroelectric characteristics. The piezoelectric properties of （Na0.84K0.16）0.5Bi0.5TiO3 ceramic have been improved by doping Sb2O3, The piezoelectric constant d33=124 pC/N is the maximum of all the compositions, and the planar electromechanical coupling factor kp is 24.87 %. The dielectric constant ε33^T/ε0 and dielectric loss tanδ increase with the augment of dopant Sb2O3.