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Interaction Between AsHg and VHg in Arsenic-Doped Hg1-xCdxTe
  • ISSN号：0361-5235
  • 期刊名称：Journal of Electronic Materials
  • 时间：2013.9.9
  • 页码：3054-
  • 相关项目：碲镉汞材料p型掺杂激活的微观途径和自补偿效应的机理研究
作者： Wang, Ziyan|Huang, Yan|Chen, Xiaoshuang|Zhao, Huxian|Lei, Wen|Lu, Wei|
同期刊论文项目
碲镉汞材料p型掺杂激活的微观途径和自补偿效应的机理研究
期刊论文 17
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