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Si掺杂对缺陷诱导的GaN磁性的影响
  • ISSN号：1001-9014
  • 期刊名称：Journal of Infrared and Millimeter Waves
  • 时间：2011
  • 页码：229-
  • 分类：O469[理学—凝聚态物理;理学—电子物理学;理学—物理]
  • 作者机构：[1]东华大学应用物理系,上海201620, [2]中国科学院上海技术物理研究所国家红外物理室,上海200083, [3]华东师范大学电子工程系,上海200241
  • 相关基金：国家自然科学基金项目（61006091 60876067 60990312）; 973项目（2007CB92400）
  • 相关项目：碲镉汞材料p型掺杂激活的微观途径和自补偿效应的机理研究
作者： 张蕾|邢怀中|黄燕|张会媛|王基庆|
关键词： GaN:Si, 第一性原理, 磁性, GaN：Si, the first principle, magnetism
中文摘要：

利用第一性原理局域密度自旋近似方法,研究了缺陷诱导的GaN的内禀磁性以及Si掺杂对缺陷GaN磁性的影响.研究发现缺陷诱导GaN的内禀磁矩为3μB,Si掺杂后缺陷诱导的GaN磁矩发生淬灭为2μB.随Si含量的增加磁矩进一步减少.该理论结果对实验有指导意义.

英文摘要：

Using the first principle method within the local spin density approximation,both the magnetism of defect induced in GaN and the effect of Si co-doping on the magnetism in GaN with defect were investigated.It was found that defect-induced intrinsic magnetic moment of GaN is 3μB,while the magnetic moment is quenched to 2μB in Si-co-doping GaN：Si.The magnetic moment decreases with the increase of the concentration of Si.The result is very helpful for experiments.

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碲镉汞材料p型掺杂激活的微观途径和自补偿效应的机理研究
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期刊信息
  • 《红外与毫米波学报》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国科学院上海技术物理研究所 中国光学学会
  • 主编：褚君浩
  • 地址：上海市玉田路500号
  • 邮编：200083
  • 邮箱：jimw@mail.sitp.ac.cn
  • 电话：021-25051553
  • 国际标准刊号：ISSN：1001-9014
  • 国内统一刊号：ISSN：31-1577/TN
  • 邮发代号:4-335
  • 获奖情况:
  • 1992、1996年获全国优秀学术期刊一等奖,1999年首届国家期刊奖
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,美国科学引文索引（扩展库）,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,瑞典开放获取期刊指南,中国北大核心期刊（2000版）
  • 被引量:8778