中文摘要：

基于内聚力模型,运用ANSYS仿真软件研究了InSb芯片在N电极附近的脱落和碎裂问题。模拟结果显示：在N电极区域,InSb芯片沿隔离沟槽存在明显的脱落趋势;为了解InSb芯片碎裂失效分布状况,在InSb芯片中做切分处理,并在切分面上选取等间距内聚节点,得到了节点沿X轴方向的相对分离量,及相对分离量最大节点沿不同坐标轴的变化趋势。模拟结果中InSb芯片脱落失效区域和分离量较大的内聚节点所在位置与典型InSb焦平面探测器光学碎裂分布相吻合,这为后续研究InSb芯片中裂纹起源及扩展提供参考。

英文摘要：

Based on Cohesive Zone Model（ CZM）,the failure problem of delamination and fracture of InSb chip around N electrode materials is studied by using ANSYS. The simulation results show that InSb chip has an obviously tendency of delamination around N electrode materials along the groove. To study the distribution of fracture,the InSb chip is divided,and some cohesive nodes with equal step are selected in segmentation surfaces,relative separation along the X- axis is obtained,and the strain tendency of node with highest displacement of relative separation along the X,Y and Z- axis is drawn. In simulation results,the region which contains failure InSb chip and cohesive nodes with higher relative separation displacement is agree closely with the typical optical fracture distribution of InSb infrared focal plane arrays（ IRFPAs）,which provides references for analysis of crack initiate and growth in InSb chip.