中文摘要：

石墨烯自从2004年问世之后，由于独特的结构和优异的性能很快便成为了碳素家族的明星而引起了各界的关注。石墨烯独特的电学性能使其有望替代硅成为下一代半导体工业的主角。然而要实现石墨烯电子器件的构建，必须先解决在绝缘或半导体衬底上直接制备石墨烯的难题。综述了近几年不同绝缘衬底对化学气相沉积法制备石墨烯所产生的影响，分析比较了不同绝缘衬底的优缺点，并展望了石墨烯的发展及应用前景。

英文摘要：

Graphene has caught wide attention due to its unique and excellent properties since its first isolation in 2004. Due to its outstanding performance such as high carrier mobility, high elasticity and optical transparency, graphene is expected to become the potential functional material which is applied to semiconductor industry. Although metabcatalyzed chemical vapor deposition could achieve the grown graphene replaced the underlying dielectric suh- strates by the post-removal of metal, it still cannot avoid the metal contaminations or damage of graphene film. It is necessary to prepare a graphene film which directly grows on an insulating substrate, when the graphene is used in electronic devices. Herein, the recent progress and some important research results in graphene directly grown on in- sulating substrates are introduced, and further applications based on graphene are briefly introduced.