中文摘要：

成功将氧化铟掺杂到氧化镓上制备了In2O3/Ga2O3催化剂,并利用X射线衍射（XRD）、透射电子显微镜（TEM）、X射线光电子能谱（XPS）、紫外漫反射光谱（UV-Vis DRS）、光致发光光谱（PL）和电感耦合等离子体发射光谱（ICP-AES）等表征手段对In2O3/Ga2O3进行了分析.同时,进一步考察了In2O3/Ga2O3的光催化固氮性能.结果表明,In2O3的引入提高了Ga2O3的光吸收性能和氧空位的比例,并且有利于其表面光生电子和空穴的分离.当In2O3/Ga2O3材料用于光催化固氮时,其最佳In2O3掺杂量为2.29%,最佳材料焙烧温度为500℃.最后,研究了空穴捕获剂种类的影响,发现在叔丁醇的体系中,In2O3/Ga2O3的光催化固氮效率最高.此外,氮源对固氮效果也存在较大影响.以空气作为氮源的光催化固氮过程因存在间接固氮过程,相对于以高纯氮气作为氮源的光催化固氮效率更高.

英文摘要：

In2O3/Ga2O3 catalysts were successfully synthesized by doping indium oxide into gallium oxide and characterized by X-ray powder diffraction（XRD）,transmission electron microscopy（TEM）,X-ray photoelectron spectroscopy（XPS）,UV-vis spectra（UV-vis DRS）,photoluminescence spectroscopy（PL） and inductive coupled plasmaemission spectrometer（ICP-AES）.The efficiency of nitrogen photofixation over In2O3/Ga2O3 catalysts was investigated.The results showed that the introduction of In2O3 could improve the light-absorbing ability and oxygen vacancies of Ga2O3,and enhance the separation efficiency of photo-induced electron-holes.It is found that the optima doping content and calcination temperature of In2O3/Ga2O3 in nitrogen photofixation was 2.29% and 500 ℃,respectively.After evaluating the effect of hole-trapping scavengers,the nitrogen photofixation efficiency of In2O3/Ga2O3 was found to be the highest with addition of t-Bu OH as scavenger.In addition,nitrogen source also had an effect on the nitrogen photofixation performance of the catalyst.The nitrogen photofixation efficiency under the air was relatively higher than that under the high-purity nitrogen gas because of the indirect nitrogen photofixation process.