中文摘要：

研制了双面硅条探测器。探测器灵敏面积为48mm×48mm,厚约300μm,结面和欧姆面的硅条互相垂直,均由相互平行、宽度相等的48条组成,每条宽0.9mm、间距0.1mm。对其电气特性（耗尽偏压、反向漏电流、条间电阻）和探测特性（上升时间、能量分辨、条间串扰）进行了测试。在偏压为-15V时,各条平均反向漏电流小于10nA。对于从结面入射的5.157 MeV的α粒子,前放信号上升时间约45ns,结面各条的能量分辨率约0.6%-0.7%,基本无条间串扰;欧姆面各条能量分辨率较差,存在条间串扰。

英文摘要：

The double-sided silicon strip detector（DSSD）was developed.The detector＇s sensitive area is 48mm×48mm and the thickness is about 300μm.Both of two sides surfaces are divided into equal 48 strips with width of 0.9mm by oxide separation of0.1mm.The electronic performance（full depletion bias voltage,reverse leakage current and interstrip resistance）and detection performance（rise time,energy resolution and crosstalk）were tested.The reverse leakage current of each strip is less than 10 nA,and the rise time of preamplifiers for 5.157 MeVαparticles is about 45 ns under bias voltage of-15 V.The junction side strips display an energy resolution of 0.6%-0.7%whereas the ohmic side strips show an unsatisfactory resolution.The crosstalk between neighboring strips is negligible on the junction side but interferes with each strip on the ohmic side.