位置：成果数据库 > 期刊 > 期刊详情页
Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2015.1.1
  • 页码：013106-
  • 相关项目：低维电子体系的量子输运研究
作者： Zhenzhao Jia|Baoming Yan|Dapeng Yu|Xiaosong Wu|
同期刊论文项目
低维电子体系的量子输运研究
期刊论文 17
同项目期刊论文
Electrical control of intervalley scattering in graphene via the charge state of defects
Observation of vacancy-induced suppression of electronic cooling in defected graphene
Highly sensitive hot electron bolometer based on disordered graphene
Self healing of defected graphene
介观样品低温热电效应的测量方法
Effect of impurity doping in gapped bilayer graphene
High-Mobility Bi2Se3 Nanoplates Manifesting Quantum Oscillations of Surface States in the Sidewalls
Transport study of graphene adsorbed with indium adatoms
Large tunable linear magnetoresistance in gold nanoparticle decorated graphene
Boron Nitride Film as a Buffer Layer in Deposition of Dielectrics on Graphene
外尔费米子的奇特热电性质