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The application of the electric field modulation and charge shielding effects to the High Voltage Si
  • ISSN号：0255-9609
  • 期刊名称：IETE Technical Review
  • 时间：2012.7
  • 页码：276-281
  • 相关项目：打破硅极限超低导通电阻功率器件关键技术研究
作者： 段宝兴|
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打破硅极限超低导通电阻功率器件关键技术研究
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