中文摘要：

异质结的高低阻态可以分别代表逻辑＂0＂和＂1＂,从而实现二进制数据存储.采用磁控溅射法制备Au/BaTiO3/SrRuO3异质结.研究结果表明在不同工艺条件下制备的BaTiO3薄膜均具有（002）择优取向.电学测试表明：在较低气压下制备的薄膜,异质结中可以实现可逆的单极性到双极性电阻转变;在较高气压下制备的薄膜,异质结中可以实现不可逆的非对称双极性电阻转变.这些实验结果可以用界面调制的随机断路器网络模型统一解释.

英文摘要：

The high and low resistance state of heterojunction can represent logic ＂0＂ and ＂1＂,thereby enabling the storage of binary data.The Au/BaTiO3/SrRuO3 heterogenous junctions were fabricated by magnetron sputtering.Our study shows that the BaTiO3 thin films are grown along the（002）preferred orientation under different technological conditions.The Au/BaTiO3/SrRuO3 heterojunctions show reversible conversion from unipolar to bipolar resistance switching under low pressure and irreversible asymmetric bipolar resistance switching under relatively high pressure.These results can be universally explained by the interface-modified random circuit breaker network model.