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Comparison of the photoemission behaviour between negative electron affinity GaAs and GaN photocatho
  • 期刊名称：Chinese Physics B
  • 时间：2011.4.4
  • 页码：1-6
  • 相关项目：变组分AlGaAs/GaAs NEA光电发射材料研究
作者： Zhang Yi-Jun|Zou Ji-Jun|Wang Xiao-Hui|Chang Ben-Kang|Qian Yun-Sheng|Zhang Jun-Ju|Gao Pin|
同期刊论文项目
变组分AlGaAs/GaAs NEA光电发射材料研究
期刊论文 13 会议论文 2 获奖 6 专利 2
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Negative Electron Affinity AlGaAs/GaAs Photocathodes with Exponential-doping Structure
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High-efficiency graded band-gap AlxGa1-xAs/GaAs photocathodes grown by metalorganic chemical vapor d
GaAs真空电子源衰减模型研究
变组分AlGaAs/GaAs透射式光电阴极分辨力特性分析
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