中文摘要：

ZnO是一种宽带隙Ⅱ-Ⅵ族半导体材料,由于其独特的性能,如高电子迁移率、广泛的激子结合能,是一种很有前途的光电器件材料;但因本征施主缺陷和施主杂质引起的自补偿效应等很难使其有效地实现n型向p型导电的转变.介绍了ZnO的p型掺杂机理、掺杂元素分类及国内外对p型ZnO研究的最新进展.

英文摘要：

Abstraet. ZnO is a versatile II - VI group semiconductor material with a wide bandgap. It is a promising material for opto-electronic device application due to its unique propertys, such as high electron mobility and large exciton binding energy. The transformation from the n-type to p-type is very difficult owing to the self-compensation effect resulted from the native donor defects and impurity. This review summarized the doping mechanism of p-type ZnO, the latest developments of p-type doped ZnO, and the classification of doping element. Key words：p-type ZnO; doping mechanism ; doping elements