中文摘要：

采用光学浮区法生长了尺寸Ф（7~9 mm）×（30~35 mm）的β-Ga2O3：In单晶。X射线衍射物相分析表明,β-Ga2O3：In单晶仍属于单斜晶系。研究了不同In掺杂量的β-Ga2O3：In单晶的吸收光谱和电学性能。结果表明：与纯β-Ga2O3单晶相比,β-Ga–22O3：In单晶在红外波段存在明显吸收。β-Ga2O3：In单晶的电导率在10量级,Holl载流子浓度可以达到6×1019/cm2,说明掺杂In3＋对β-Ga2O3单晶的电学性能有明显改善。

英文摘要：

β-Ga2O3：In single crystal with 30-35 mm in length and 7-9 mm in diameter was grown by an optical floating zone method. Based on the X-ray diffraction analysis, β-Ga2O3：In single crystal obtained belongs to a monoclinic crystal system. The absorption spectra and electric properties offi-Ga2O3：In crystal doped with different mole fractions of In3＋ were investigated. The results indicate that compared to pure β-Ga2O3 crystal, β-Ga2O3：In single crystal has an intense absorption in the infrared band. The conductivity of β-Ga2O3：In single crystal is above 10-2 S/cm, and the carrier density can achieve 6×1019/cm2. It is indicated that the doping of In3＋ could improve the electrical properties of the β-Ga2O3 single crystal.