中文摘要：

在低温5K下，采用光致发光光谱及外加偏压调谐量子点电荷组态研究了InAs单量子点的精细结构和对应发光光谱的偏振性、不同带电荷激子的圆偏振特性．得出如下结果：1）指认InAs单量子点中不同荷电激子的发光光谱和对应的激子本征态的偏振特性；2）外加偏压可以调谐量子点的荷电激子的发光光谱；3）伴随着电子、空穴的能量弛豫，电子的自旋弛豫时间远大于空穴的自旋弛豫时间．

英文摘要：

Quantum dot （QD） samples studied in the experiment are grown by molecular-beam epitaxy on semi-insulating GaAs substrates. The photoluminescences （PLs） of the excitons in a single QD are measured at 5 K. The PL spectra of the excitons, biexcitons and charged excitons are identified by measuring and analyzing both PL peaks of the circular and linear polarization and power-dependent PL properties. The charged exciton emissions can be tuned by applying a bias voltage, i.e., negatively charged excitons are changed into positively charged excitons by changing the voltage from 1.0 to -1.0 V. It is shown that the electron-spin will slowly relax compared with that of the hole when they relax from wetting layer into the QD.