中文摘要：

在对InAs单量子点施加流体静压的实验中,使用了带有压电陶瓷的连续加压装置,在低温连续施加流体静压的情况下,可以调节量子点单激子能量兰移约320meV.在对不同流体静压下单激子发光的二阶关联函数测量之后,证明流体静压并不影响单激子发光的单光子特性.同时通过流体静压,可以实现量子点双激子态由反束缚态到束缚态的转变,并且给出了这一过程的偏振分辨光谱图.最后观察到单量子点精细结构劈裂随流体静压的增加而增加,而且精细结构劈裂的增加量可以达到约150μeV.

英文摘要：

Exciton and biexciton emission energies as well as excitonic fine-structure splitting（FSS） in single InAs/GaAs quantum dots （QDs） have been continuously tuned using hydrostaticpressure up to 4.4 GPa. The blue shift of excitonic emission and the increase of FSS are 320 meV and 150 μeV, respectively, which are significantly greater than those that could beachieved by previously reported techniques. The biexciton binding energy linearly increases with increasing pressure and tends to be sublinearat high pressure.