中文摘要：

提供了一种实现片上太赫兹天线集成器件光电导开关材料低温GaAs（LT-GaAs）外延层的转移工艺,使用HNO_3-NH_4OH-H_2O-C_3H_8O_7·H_2O溶液-H_2O_2-HCl腐蚀体系化学湿法腐蚀分子束外延（MBE）生长的外延材料,Hall测试表明MBE生长的此外延材料电阻率在106Ω·cm量级.剥离半绝缘GaAs（SI-GaAs）衬底层与Al_（0.9）Ga_（0.1）As牺牲层得到1.5μm LT-GaAs与环烯烃聚合物（COP）键合的结构.原子力显微镜（AFM）、扫描电子显微镜（SEM）、高倍显微镜形貌表征表明剥离后的结构表面平整光滑,表面粗糙度（RMS）为2.28 nm,EDAX能谱仪分析显示该结构中不含Al组分,满足光刻形成光电导开关的要求.

英文摘要：

A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω cm. HNO3-NH4OH-HzO-C3HsO7 H20-H2O2-HCl and wet chemical etch- ing were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5 pum LT-GaAs bounded with COP after lift-off of SI-GaAs and A109Ga01As. AFM SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS = 2.28 nm. EDAX indicated there wasn＇t A1 in this structure. It can be used to make photoconductive switch.