中文摘要：

对一种共振隧穿弱光探测器的分子束外延生长条件进行了研究。对探测器结构进行设计,研究了不同Al束流和不同生长温度下In0.52Al0.48As材料的生长质量,结合X射线衍射及原子力显微镜测试结果确定了In0.52Al0.48As材料的最佳生长条件。研究了不同Ga束流下In0.53Ga0.47As材料的生长质量,并采用一种衬底变温的生长方法解决了恒温生长较厚In0.53Ga0.47As外延层时表面容易出现点状突起的问题,获得了平整的In0.53Ga0.47As外延表面。分别采用恒温和变温的生长方法制备了探测器样品,并对其电流-电压特性及光响应进行了测试,测试结果表明,采用变温生长方法制备的探测器样品具有更高的峰值电流和光响应。

英文摘要：

Molecular beam epitaxy conditions of resonant tunneling diode photodetector（RTD-PD） are researched.The structure of the detector with In0.53Ga0.47 As absorption layer and In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48 As double barrier structure is designed. The growth quality of In0.52Al0.48 As material under different Al flux and growth temperature is tested and the optimal growth conditions are determined through X-ray diffraction and atomic force microscope test. The growth quality of In0.53Ga0.47 As material under different Ga flux is researched. As there are punctate embossments on In0.53Ga0.47 As surface grown under constant temperature, the In0.53Ga0.47 As material is grown under varying temperature and the punctate embossments are eliminated. Two RTD-PD samples grown under constant temperature and varying temperature are fabricated. The current-voltage and photo response test show that the sample grown under varying temperature reaches higher peak current and photo response.