中文摘要：

采用超声雾化热解法在石英基底上制备了掺锑二氧化锡透明导电薄膜。采用x射线衍射检测薄膜的晶体结构，扫描电子显微镜观察薄膜的表面形貌，研究了不同基底温度和Sb掺杂量下薄膜的晶体优势生长面、晶粒形状的变化、可见光透过率和方块电阻。结果表明，薄膜的晶粒度在80—200nm。当Sb摩尔比为1％、基底温度为540℃时，薄膜的方块电阻最小，约为16．9Ω／口。随着镀膜温度的上升，薄膜的优势生长面从（110）面逐渐向（211）面转移。当sb掺杂比为1％时，薄膜的可见光透过率最高，当掺杂浓度增大后，薄膜的透过率出现下降。

英文摘要：

The antimony doped tin oxide transparent conductive films were prepared in quartz substrate with ultrasonic spray pyrolysis. The crystal structure of thin film was tested by using X ray, the surface appearance was observed by the scanning electron microscope, and the performances of the films were studied, including the advantages of the crystal growth plane, the grain shape changes, visible light transmittance and sheet resistance, under different temperatures and Sb doping. The results show that the crystal size of thin film is 80 - 200 nm. When the Sb doping ratio is 1% , and the basal temperature is 540 ~C , the minimum square resistance of the thin film is about 16.91 fI/l--]. The advantage of the crystal growth face is gradually transfered from the （110） surface to the （211） surface, along with the coating temperature rise. The visible light transmission of ATO film is maximum, when Sb doping ratio is 1% , the transmittance of the film is decreased when the doping concentration increases.