以激光为热源,以SiC纳米颗粒材料为前驱体,用激光照射SiC纳米颗粒原位生长晶须.结果表明:由于激光能量输出的瞬时特性,SiC纳米颗粒受到激光的照射可瞬时生成SiC晶须.随着激光功率的提高,晶须的直径从纳米级增大到微米级.由于在激光光斑内能量呈高斯分布,光斑内不同区域的SiC颗粒的温度不同,致使生成的晶须形态在不同的区域分别呈现为团絮状、网状和棒状等.X射线衍射分析表明,激光照射SiC纳米颗粒原位生长的晶须具有很高的纯度.
The experiment of SiC nano-particles irradiated directly by laser was performed. The whiskers are found at local region in SiC nano-particles specimen, which was prepared by cold-pressing method and irradiated directly by laser. Some kinds of the whisker morphologies such as the flocculent, the reticular and the virgulate are grown. The diameter of whiskers is diversified from nanometer scale to micrometer scale due to the different laser parameters such as the laser power and the laser scanning speed. The XRD phase analysis shows there are not any impurities in whisker.