中文摘要：

利用强流脉冲（HCPEB）电子束技术对多晶纯Cu进行了辐照处理,并利用透射电镜对HCPEB诱发的空位簇缺陷进行了表征.实验结果表明,HCPEP辐照金属可在纯Cu表层诱发大量的过饱和空位,并形成四方形空位胞及空位型位错圈和堆垛层错四面体（SFT）,HCPEB瞬间的加热和冷却诱发的幅值极大的应力和极高的应变导致的整个原子平面的位移是空位簇缺陷形成的主要原因.此外,扫描电镜分析表明HCPEB辐照可以在纯Cu表面形成高密度、弥散分布和尺寸细小的微孔.过饱和空位或空位团簇沿晶体缺陷向表面扩散、凝聚是表面微孔形成的根本原因.这表明HCPEB技术有可能成为一种快速制备金属表面多孔材料的新方法。

英文摘要：

In this paper,high-current pulsed electron beam（HCPEB） was used to irradiate the polycrystalline pure copper.The vacancy defect clusters of the irradiated surface layer have been investigated by using transmission electron microscopy.Very dense vacancy defect clusters involving square cells,vacancy dislocation loops and stacking fault tetrahedra were formed after HCPEB irradiation.It suggests that the very high stress and high strain rate induced by rapid heating and cooling due to HCPEB irradiation could cause the shifting of whole atomic planes synchronously,which is the probable mechanism of the formation of the vacancy defect clusters.Additionally,it was established by scanning electron microscopy investigations that dense,fine and dispersed micropores on the irradiated surface of pure copper can be successfully fabricated by using HCPEB irradiation.The dominating formation mechanism of surface micropores should be attributed to the formation of supersaturation vacancies within the near-surface introduced during HCPEB irradiation and vacancy migration along grain boundaries and（or） dislocations towards the irradiated surface.The present results indicate that HCPEB technique may become a new method for rapid synthesis of surface porous materials.