中文摘要：

利用低压化学气相沉积方法在以Au作催化剂的Si衬底上生长了InN纳米线.扫描电子显微镜分析表明,这些纳米线的直径在60—100nm的范围内,而其长度大于1μm.高分辨透射电子显微镜图像表明,合成的纳米线中含有六方相和立方相的InN晶体.这些InN纳米线具有良好的场发射特性和稳定的场发射电流,其开启场为10.02V/μm（电流密度为10μA/cm^2）,在24V/μm的电场下,其电流密度达到5.5mA/cm^2.此外,对InN纳米线的场发射机理也进行了讨论.

英文摘要：

InN nanowires were prepared on Si substrates by low pressure chemical vapor deposition using Au as the catalyst. Scanning electron microscopy showed that the diameter of these nanowires is 60-100 nm, and the length is larger than 1 μm. High resolution transmission electron microscopy showed that the synthesized nanowires are a mixture of hexagonal and cubic phase. The field electron emission characteristics of these InN nanowires are good and the field emission current is stable. The turn-on electric field was 10.02 V/μm（the current density being 10 μA/cm^2 ）, and at the high electric field of 24 V/μm, the current density was as high as to 5.5 mA/cm^2 . The field electron emission mechanism of these nanowires is discussed.