中文摘要：

利用直流磁控溅射方法制备了GaN薄膜．X射线衍射及Raman光谱结果表明薄膜样品为非晶结构；傅立叶红外光谱表明薄膜样品的主要吸收峰为Ga～N键的伸缩振动；光致发光测试得到了360nm处的紫外发光谱；测量薄膜样品的紫外-可见谱，并利用Tauc公式计算得到样品的光学带隙为3．74eV，这与光致发光谱得到的结果是一致的．

英文摘要：

GaN thin films were prepared by direct current （DC） planar magnetron sputtering on Si and SiO2. The films were characterized by X-ray diffraction （XRD）, Raman, Fourier Transform Infrared Spectroscopy （FTIR）, photoluminescence （PL） and UV-Vis spectra. XRD and Raman spectrum show that the films are amorphous. Fourier infrared absorbance spectrum shows that the main absorbance is Ga-N stretching vibration. 360nm ultraviolet emission is obtained at room temperature. UV-Vis result shows that the optical band gap of the films is 3.74eV, which is consistent with photoluminescence spectrum result.