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High-temperature stable field emission of B-doped SiC nanoneedle arrays.
  • ISSN号：2040-3364
  • 期刊名称：Nanoscale
  • 时间：2015.5.7
  • 页码：7585-7592
  • 相关项目：4H-SiC纳米线阵列结构精细调控及其日盲型紫外光探测性能研究
作者： Wei, Guodong|Gao, Fengmei|Li, Chengming|Yang, Weiyou|
同期刊论文项目
4H-SiC纳米线阵列结构精细调控及其日盲型紫外光探测性能研究
期刊论文 19
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