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忆阻器存储研究与展望
  • ISSN号:1000-1239
  • 期刊名称:计算机研究与发展
  • 时间:2012
  • 页码:79-84
  • 分类:TD94[矿业工程—选矿] TM13[电气工程—电工理论与新技术]
  • 作者机构:[1]National Laboratory for Parallel and Distributed Processing, School of Computer, National University of Defense Technology, Changsha 410073, China
  • 相关基金:Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61003082) and the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 60921062).
  • 相关项目:层次存储的访问分析与优化方法研究
中文摘要:

As the fourth passive circuit component, a memristor is a nonlinear resistor that can "remember" the amount of charge passing through it. The characteristic of "remembering" the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. In this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.

英文摘要:

As the fourth passive circuit component, a memristor is a nonlinear resistor that can "remember" the amount of charge passing through it. The characteristic of "remembering" the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. In this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.

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期刊信息
  • 《计算机研究与发展》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国科学院计算技术研究所
  • 主编:徐志伟
  • 地址:北京市科学院南路6号中科院计算所
  • 邮编:100190
  • 邮箱:crad@ict.ac.cn
  • 电话:010-62620696 62600350
  • 国际标准刊号:ISSN:1000-1239
  • 国内统一刊号:ISSN:11-1777/TP
  • 邮发代号:2-654
  • 获奖情况:
  • 2001-2007百种中国杰出学术期刊,2008中国精品科...,中国期刊方阵“双效”期刊
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  • 被引量:40349