中文摘要：

硅纳米线异质结太阳电池因具有良好的陷光效果及径向结收集特性而受到广泛关注.利用低浓度NaOH溶液在硅片表面腐蚀出微米尺度的金字塔结构,并采用反应离子刻蚀（RIE）的方式在其上进一步腐蚀出纳米线形貌,构建硅微纳复合陷光形貌结构.通过分析硅微纳复合陷光形貌结构的陷光机理,指导优化反应离子刻蚀工艺中的刻蚀时间,最终获得不同形貌结构的陷光衬底.通过分析其光学特性发现,在RIE时间为120 s时,硅微纳复合结构衬底反射率可小于5%,具有优异的陷光特性以及在硅异质结太阳电池中应用的巨大潜力.

英文摘要：

Silicon nanowire（SiNWs） heterojunction solar cells have attracted much attention due to its good light-trapping effects and radial-junctions. In this work,low concentration NaOH solution has been adopted to fabricate silicon micro-pyramids（SiMPs）. Further,silicon nanowires have been etched on SiMPs by reactive ions etching（RIE） process to formed a SiNWs/MPs hierarchical light-trapping structure. By analyzing the mechanism of light-trapping effect and optimizing the etching-duration of the RIE process,the substrates with different morphologies have been achieved. It could be observed that the SiNWs/MPs hierarchical lighttrapping structure could obtain reflectance of 5% when the RIE-duration was 120 s. Also,the excellent lighttrapping effects indicate it has magnificent potential for silicon heterojunction solar cells applications.