中文摘要：

利用阳极氧化铝模板（AAO）进行Ni的电化学沉积,通过在溶液中引入螯合剂控制电解质的有效浓度和电沉积的过电位,实现了Ni纳米线和纳米管阵列的可控制备.通过分析电沉积过程中纳米线和纳米管在不同位置生长速率（侧壁（Vw）和底端（Vb））的控制因素,我们提出了纳米线和纳米管生长的可能机制.当电解质浓度高而还原电位更负（如-1.5V）时,或者当电解质浓度低而还原电位较负（如-0.5V）时,Vw〉Vb,可以获得Ni纳米管阵列;当电解质浓度高而还原电位较负（如-0.5V）时,或者当电解质浓度低而还原电位更负（如-1.5V）时,Vw≈Vb,可以获得Ni纳米线阵列.这种生长机制适用于多种金属纳米管或者纳米线阵列的可控制备.

英文摘要：

We report the controlled fabrication of Ni nanotube and nanowire arrays by electrodeposition using anodic aluminum oxide （AAO） as a template.Ni nanotube arrays or nanowire arrays were obtained by changing the concentration of the electrolyte and the overpotential of the electrodeposition.The introduction of chelating species is crucial for nanotube formation because they can regulate the effective concentration of the electrolyte.A possible mechanism for the formation of the nanotubes/nanowires is proposed by considering the different contributing factors for the growth rate of the wall （Vw） and that of the bottom （Vb）.Ni nanotube arrays can be obtained when Vw〉Vb either at a high electrolyte concentrations （CNi2＋） and at a more negative electrodeposition potential （Ued） or at a lower CNi2＋ with a less negative Ued.Ni nanowire arrays can also be obtained when Vw≈Vb either at a high CNi2＋ with a less negative Ued or at a lower CNi2＋ with a more negative Ued.This mechanism may be used as a general strategy for the controlled synthesis of nanotube or nanowire arrays containing many kinds of metals such as Cu, Co, and Au etc.