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5.3 A / 400V normally - off AlGaN / GaN - on - Si MOS - HEMT with high threshold voltage and large g
  • 期刊名称：Electronics Letters
  • 时间：2013
  • 页码：221-222
  • 相关项目：准一维限域体系的量子输运特性研究
作者： Z Dong|S Tan|Y Cai|H Chen|S Liu|J Xu|L Xue|G Yu...|
同期刊论文项目
准一维限域体系的量子输运特性研究
期刊论文 46 会议论文 1
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