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中文摘要：
采用气液固机理生长了大批量均匀的InN纳米线,扫描电镜图像显示出这些光滑纳米线的平均直径和长度分别为65nm和15μm。高分辨透射电镜、选区电子衍射、微区拉曼散射光谱结合EDS能谱说明了纳米线为六方纤锌矿结构单晶,并证实了纳米线的生长遵循气液固生长机理。纳米线的光致发光光谱在1.89eV附近有一发光峰。改变NH3的流量可以调控纳米线的形貌和生长方向,我们从能量角度对此进行了解释。
英文摘要：
Uniform indium nitride nanowires were grown at a large scale via vapor-liquid-solid growth mechanism.Scanning electron microscopy imaged that smooth indium nitride nanowires have an average diameter of 65nm and average length of 15μm.High-resolution transmission electron microscopy,selected-area electron diffraction,micro-Raman measurements combined with EDS revealed that indium nitride nanowires have the nature of single crystal with a hexagonal wurtzite structure and indicate that these nanowires follow VLS growth mechanism.Photoluminescence spectrum presented a dominant luminescent peak at 1.89eV.Morphology and growth of the nanowires can be controlled by changing NH3 flux,this phenomenon was explained by an energy minimization model.
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