中文摘要：

电气刚度是影响MEMS谐振器谐振频率精度的因素之一。但是对于谐振器受到应力时,产生的形变量对电气刚度的影响的理论研究报道甚少。鉴于此,本文对电容式盘结构谐振器受径向静电力和纵向惯性力下的形变量以及电气刚度的改变量进行了系统的理论分析。研究结果表明,当圆盘与电极间隙为50 nm,且电压达到50 V时,圆盘由于静电力产生的径向形变量可达间隙的2．05%,电气刚度改变6．15%。当圆盘半径为100μm,且受到10000 gn 的纵向惯性力时,其最大形变量可以达到圆盘厚度的2．4%,电气刚度改变2．4%。本文分析结果对其他盘结构谐振器的分析亦有重要借鉴意义。

英文摘要：

Electrical stiffness is one of the factors that affect the resonant frequency accuracy of MEMS resonator. But there are few reports on the study of the impact of deformation on the electrical stiffness when the resonator is under the stress. Therefore,the deformation under the radial electrostatic force and longitudinal inertial force,and the variation on the electrical stiffness of capacitive disk resonator are systematically analyzed in this paper. The results show that when the gap between the disk and electrodes is 50 nm,and the voltage reaches 50 V,the radial deformation due to the electrostatic force can be 2 . 05% of the gap and the electrical stiffness changes 6 . 15%. When the longitudinal inertial force of 10 000 gn is supplied,if the radius of disk is 100μm,the biggest deformation can be 2 . 4% of the disk thickness and the electrical stiffness changes 2 . 4%. The results of this paper also have important references for other disk resonators.