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A Novel High-Voltage (> 600 V) LDMOSFET With Buried N-Layer in Partial SOI Technology
  • ISSN号：0018-9383
  • 期刊名称：Ieee Transactions On Electron Devices
  • 时间：0
  • 页码：1131-1136
  • 相关项目：纳米尺度新型MOS器件的量子模型研究
作者： Hu, Yue|Huang, Qijun|Wang, Gaofeng|Chang, Sheng|Wang, Hao|
同期刊论文项目
纳米尺度新型MOS器件的量子模型研究
期刊论文 19 会议论文 2
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