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High-order circuit-level thermal model of vertical-cavity surface-emitting lasers
  • ISSN号：1751-8768
  • 期刊名称：IET Optoelectronics
  • 时间：0
  • 页码：19-27
  • 相关项目：纳米尺度新型MOS器件的量子模型研究
作者： Chang Qi|Xinzhi Shi|Gao Feng Wang|
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纳米尺度新型MOS器件的量子模型研究
期刊论文 19 会议论文 2
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