将空心阴极效应运用于SiC陶瓷的烧结,选用纯SiC粉体为原料,在不添加烧结助剂的条件下,进行了烧结试验,并探讨了工艺参数的影响。结果表明:空心阴极烧结工艺可制备出致密度较高的SiC陶瓷。2200℃,保温3h的烧结条件下,获得相对密度为95%SiC烧结体。烧结体的断口SEM照片显示烧结试样的晶粒生长发育较为完善,气孔和晶界相对较少,断裂模式为穿晶断裂。
In this paper, the effect of hollow cathode discharge was applied to the sintering of SiC ceramic, pure SiC powder as the raw material that was produced by the method of carbothermic method, The result shows that, SiC ceramics with high performances of high density was obtained. The densities of samples sintered at 2200℃ after holding 3h, reached the relative density of 95%, grain boundary phase and pores were little, and fracture mode was intercrystalline fracture.