中文摘要：

各向异性磁电阻（AMR）薄膜材料被广泛应用于磁传感器和硬盘的读出磁头中。器件的小型化要求AMR薄膜材料必须做得很薄。采用磁控溅射的方法在玻璃基片上制备了Ta／NiFe／Ta磁电阻超薄薄膜，将几个纳米厚的Al2O3层插入Ta／NiFe／Ta薄膜的Ta／NiFe界面，研究该插层对超薄NiFe薄膜性能的影响。结果表明：由于Al2O3层的“镜面反射”作用，适当厚度和结构状态的Al2O3层可以提高薄膜的磁电阻值，当NiFe薄膜厚度为5nm时，通过在界面处插入约2mm的Al2O3层，薄膜的磁电阻值从0．65％提高到了0．80％，增加幅度超过20％。性能提高的主要原因是除纳米Al2O3插层的“镜面反射”作用外，抑制Ta／NiFe的界面反应以及减少Ta层分流也是重要的影响因素。

英文摘要：

Ultrathin Ta/Ni81 Fe19/Ta films were prepared on glass substrates by magnetron sputtering. Effects of an Al2O3 layer inserted into the Ta/Ni81Fe19 interface on the performance of ultrathin permalloy （Ni81Fe19） films were studied. An Al2O3 layer with a proper thickness can enhance the anisotropic magneto- resistance （AMR） value without damaging the magnetic properties of permalloy films . The AMR value can be enhanced from 0.65% to 0.80% with the insertion of a 2 nm Al2O3 layer into the Ta/Ni81 Fe19 （5 nm） interface. The main reasons should be related with the improvement of the scattering paths of conduction electrons, the suppression of interface reactions, and the decrease of current shunting.