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中文摘要：
采用磁控溅射的方法制备了Co/FeMn/Co多层膜,研究了Co（底部）/FeMn和FeMn/Co（顶部）界面插入Pt层后磁矩的变化情况.通过测量磁滞回线可知,Co（底部）/FeMn界面的Pt插层改变了体系的饱和磁化强度Ms,随着Co层厚度（tCo）的增加Ms不断趋近于Co块体结构理论值1440kA/m.这是因为Co（底部）/FeMn界面产生了净磁矩,而界面处的Pt插层可以减少这种净磁矩的产生.但是,FeMn/Co（顶部）界面却表现出了与Co（底部）/FeMn界面不同的性质,其界面的Pt插层对磁矩影响很小.
英文摘要：
Co/FeMn/Co multilayers were prepared by magnetron sputtering. The change of magnetic moments by insertion of Pt spacer at the Co （bottom）/FeMn interface and FeMn/Co （top） interface has been investigated. According to the hysteresis loops measured by alternating gradient magnetometer （AGM）, the saturation magnetization （M_s） of multilayers is changed by the Pt spacer at the Co （bottom）/FeMn interface, and there is an asymptotic approach of M_s to the theoretical value of M_s of the cobalt bulk of 1440 kA/m as the thickness of Co layer （t_Co） is increased. This behavior is due to the production of net magnetic moments at the Co （bottom）/FeMn interface, which are decreased by Pt spacer at the Co （bottom）/FeMn interface. However, a significant difference between the Co （bottom）/FeMn interface and the FeMn/Co （top） interface is observed, as little influence of the Pt spacer on magnetic moments is shown when inserted at the FeMn/Co （top） interface.
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