中文摘要：

采用溶胶凝胶法制备了ZnO纳米胶体并用其作为电子传输层,采用全旋涂的方式制备了多层量子点（QD）白光发光二极管（LED）。器件结构为ITO/TPD＋PVK/量子点/遮挡层/ZnO/LiF/Al,其中发光层采用不同颜色量子点层之间添加阻挡层的结构,避免了各层量子点之间的互相干扰。介绍了量子点LED的研究进展、典型结构以及发光原理。分析了胶体ZnO电子传输层相比于传统的传输层材料的优势。探讨了ITO的处理方式及PVK与TPD的质量比等工艺参数对器件性能的影响,研究结果显示TPD和PVK的质量比为5∶1时,器件的发光特性最好。在此基础上,进一步利用湿法刻蚀使器件发光部分图形化,实现了特定字母发光的效果。

英文摘要：

The ZnO nano-scale colloid was prepared by the sol-gel method.With the prepared ZnO nano-scale colloid as the electron-transport layer,the white light multilayer quantum dot（QD）light-emitting diode（LED）was prepared using the all spin-coating method.The device structure is ITO/TPD＋PVK/QD/shield layer/ZnO/LiF/Al.In order to avoid mutual interference between the quantum dots of different layers,the luminescent layer adopted the structure with the shield layer added between different quantum dot layers with different colors.The research progress,typic structure and lighting theory of the QD LED were introduced.The preponderance of the colloid ZnO electron-transport layer was analyzed compared with the traditional electron-transport layer material.The influences of technological parameters such as the ITO processing mode and mass ratio of TPD and PVK on the device performances were analyzed.The study results show that when the mass ratio of TPD and PVK is 5∶1,the device has the best luminescence characteristics.On this basis,the wet etching was used to make device luminescence part graphical,and the specific letter glowing effect was achieved.