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Design and fabrication of a high-performance evanescently coupled waveguide photodetector
  • ISSN号:1674-1056
  • 期刊名称:《中国物理B:英文版》
  • 分类:TN929.11[电子电信—通信与信息系统;电子电信—信息与通信工程] TN215[电子电信—物理电子学]
  • 作者机构:[1]State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 相关基金:Project supported by the High Technology Research and Development Program of China (Grant No s. 2012AA012202 and 2013AA031401), the National Basic Research Program of China (Grant No. 2012CB933503), and the National Natural Science Foundation of China (Grant Nos. 61176053, 61274069, and 61021003).
中文摘要:

In this paper,we present the design,fabrication,and measurement of an evanescently coupled waveguide photodetector operating at 1.55 μm,which mainly comprises a diluted waveguide,a single-mode rib waveguide and a p–i–n photodiode with an extended optical matching layer.The optical characteristics of this structure are studied by using a three-dimensional finite-difference time-domain(3D FDTD) method.The photodetector exhibits a high 3-dB bandwidth of more than 35 GHz and a responsivity of 0.291 A/W at 1550 nm directly coupled with a cleaved fiber.Moreover,a linear response of more than 72-mW optical power is achieved,where a photocurrent of more than 21 mA is obtained at a reverse bias voltage of 3 V.

英文摘要:

In this paper, we present the design, fabrication, and measurement of an evanescently coupled waveguide photode- tector operating at 1.55 gm, which mainly comprises a diluted waveguide, a single-mode rib waveguide and a p-i-n photodiode with an extended optical matching layer. The optical characteristics of this structure are studied by using a three-dimensional finite-difference time-domain (3D FDTD) method. The photodetector exhibits a high 3-dB bandwidth of more than 35 GHz and a responsivity of 0.291 A/W at 1550 nm directly coupled with a cleaved fiber. Moreover, a linear response of more than 72-mW optical power is achieved, where a photocurrent of more than 21 mA is obtained at a reverse bias voltage of 3 V.

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期刊信息
  • 《中国物理B:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编:欧阳钟灿
  • 地址:北京 中关村 中国科学院物理研究所内
  • 邮编:100080
  • 邮箱:
  • 电话:010-82649026 82649519
  • 国际标准刊号:ISSN:1674-1056
  • 国内统一刊号:ISSN:11-5639/O4
  • 邮发代号:
  • 获奖情况:
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  • 被引量:406