中文摘要：

采用射频磁控溅射方法在石英玻璃衬底上制备了SnO2：Sb薄膜。所制备的薄膜为四方金红石结构的多晶薄膜。PL谱表明，样品在396、450、500nm附近存在室温光致发射峰，发光峰的起因分别与SnO2薄膜中的氧空位缺陷及掺杂所致的施主-受主对之间的跃迁以及电子由其激发态向基态能级跃迁等因素有关。

英文摘要：

SnO2： Sb films were prepared on quartz glass substrates by rf magnetron sputtering techniques. The obtained samples are polycrystalline films with rutile structure. The PL spectrum revealed which there were PL peaks about 396, 450 and 500nm. The origins of PL peaks were related with oxygen vacancy and the donor-acceptor band transition resulting from Sb doped and the transition from excited level to based level.