中文摘要：

n-Si (111 ) 表面跟踪 -C2H5,-C2H4COOH,-C2H2COOH 被反应在 Si-H 之中准备到 ethyl-Grignard，甲基压克力吃了，丙酸乙酯，和 carboxyls 在 trifluoroacetic 酸的存在下面被形成。合成 n-Si (lll ) 电极被扔磅 nanodots 获得，为这些电极的光电的特征在 I~-/I_3~- 氧化还原作用电解质被学习。到在太阳的照明下面的电极的相片电压和光电流密度的行为与一些 -C2H2COOH>-C2H4COOH>-H>-C2H5.The 相片电压和电极的光电流密度一起定期改变了的 j-U (相片水流密度潜力) 跟踪了 -C2H2COOH 分别地，是 -0.641 V 和 5.25 mA/cm2 比那些更否定非结合的修正。

英文摘要：

n-Si（111） surface tailed -C2H5, -C2H4COOH, -C2H2COOH were prepared by the reactions among Si-H to ethyl-Grignard, methyl acrylate and ethyl propionate, and the carboxyls were formed under the existence of trifluoroacetic acid. The composite n-Si（111） electrodes were obtained by depositing Pt nanodots and the photovoltaic characteristics for these electrodes were studied in I^-/I3^- redox electrolyte. The j-U （photo current density-potential） behaviors of photo-voltage and photocurrent densities to the electrodes under solar illumination varied regularly with groups of -C2H2COOH〉-C2H4COOH〉-H〉-C2H5. The photo-voltage and photocurrent density of the electrode tailed -C2 H2COOH were -0.641 V and 5.25 mA/cm^2, respectively, more negative than those of the non-conjugated modification.