中文摘要：

电子倍增电荷耦合器件（EMCCD）相机在使用过程中,需要校正其电子倍增增益。根据EMCCD的结构特征和单级倍增寄存器的电荷倍增特性,分析了已有电子倍增模型在实际应用中的局限性。针对特定的EMCCD器件,通过仿真计算,得到原有增益计算模型的关键参数与EMCCD工作电压、温度的数据表,并用多元回归分析的方法建立该参数与工作电压、温度的数学方程,利用该方程,代入原有增益计算模型,可以突破原增益计算模型的限制,得到了一种普遍适用且较为简单的EMCCD电子倍增增益计算方法。仿真计算所得结果与实际EMCCD器件的倍增曲线比较,数据吻合良好。该结果表明,这种确定增益的方法可以较方便地计算电子倍增器件的平均增益,在EMCCD相机设计和实际使用中有着良好的应用价值。

英文摘要：

The electron multiplication gain needs to be corrected during operation of the EMCCD camera. According to the structural characteristics of the electron multiplying CCD and the charge multiplication of the single stage multiplier, the limitation of the existing multiplication model has to be analyzed in practical application. For TI EMCCD devices, the key parameters , including the operation voltage and temperature of EMCCD, of original multiplication model can be derived by simulation, a mathematical equation of the parameters is also presented by muhiple regression analysis. And then the equation is introduced into the model, and a new method for determining the EMCCD gain is obtained, which is universal and simpler. It expands the application range of the original multiplication model. The simulation results of the model agree well with the actual data of EMCCD device. It shows that, the gain model is conven- ient for calculating the electron multiplier average gain as the charge multiplication gate voltage is changed.