以脆性材料单晶硅为研究对象,采用微铣削工艺技术,探讨单晶硅在雾性冷却条件下的塑性去除机理,研究不同切削工艺参数对单晶硅表面质量的影响,通过正交实验的方差分析得出,影响表面质量的主次因素依次为进给速度、铣削深度、主轴转速,获得的优化工艺参数即主轴转速为48 000 r/min,铣削深度为5μm,进给速度为20μm/s时,表面粗糙度最小,即表面质量最好。研究结果为脆性材料的塑性去除机理提供一定的理论参考和实验依据。
Taking the single crystal silicon as research object that belongs to brittle material, and the plastic remov- al mechanism of single crystal silicon was discussed in the fog cooling conditions by adopting micro - milling technology, the influence of different cutting process parameters on single crystal silicon surface quality was researched, the primary and secondary factors of the impact on the micro - milling surface quality were feed rate, milling depth, spindle speed in sequence by range analysis, and the ideal cutting process parameters combination was optimized and obtained, when the spindle speed is 48 000 r/min, the milling depth is 5 ~m, the feed speed is 20 ~m/s, the surface roughness is minimum and surface quality is best. The results provide certain theory reference and experimental basis for plastic removal mechanism of brittle material.