中文摘要：

利用自行设计的多热源碳化硅合成炉,研究非封闭及封闭合成炉炉表及其上方各点的温度场分布规律。结果表明：表面负荷为13W/cm^2,非封闭合成SiC,炉表最高温度约为600℃;封闭合成SiC,炉表最高温度为1061℃,距离炉表50cm高的集气罩最高温度为440℃;使用高挥发份或高固定碳含量的碳质原料、或者通过＂引射＂装置可以降低炉内各点及集气罩的温度。

英文摘要：

The distribution regularities of the temperature field in the open or closed system are studied by using the multi - thermal source furnace designed by the authors. The research results show that the maximum temperature of the furnace surface is 600℃ in open synthesis SiC, 1061℃ in the closed system, and 440℃ in the distance of 50cm from the gas - collecting channel to the furnace surface. Temperature in the furnace and gas - eolleeting channel can be reduced by using high- volatile carbonaceous material, fixed carbon or injector.