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Exciton localization effect in Mn-implanted GaN by photoluminescence measurements
  • ISSN号：0921-4526
  • 期刊名称：Physica B-Condensed Matter
  • 时间：0
  • 页码：1222-1225
  • 语言：英文
  • 相关项目：新型一维半导体纳米结构量子输运与调控
作者： Meng, X. Y.|Zhang, Y. H.|Shen, W. Z.|
同期刊论文项目
新型一维半导体纳米结构量子输运与调控
期刊论文 83 会议论文 2
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