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Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D-Applied Physics
  • 时间：0
  • 页码：796-804
  • 语言：英文
  • 相关项目：新型一维半导体纳米结构量子输运与调控
作者： Yang, C.|Shen, W. Z.|Sun, X. W.|Yu, W. D.|Zhang, Y. W.|Tan, S. T.|Zhao, J. L.|Li, X. M.|Gao, X. D.|Gu, Y. F.|Kong, J. F.|
同期刊论文项目
新型一维半导体纳米结构量子输运与调控
期刊论文 83 会议论文 2
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