位置：成果数据库 > 期刊 > 期刊详情页
The effect of dc bias on the poled states in PNZST antiferroelectric thin films
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D-Applied Physics
  • 时间：0
  • 页码：1811-1815
  • 语言：英文
  • 相关项目：电场诱导反铁电薄膜相变的热释电、电致应变研究
作者： 翟继卫|
同期刊论文项目
电场诱导反铁电薄膜相变的热释电、电致应变研究
期刊论文 13 会议论文 3 专利 2
同项目期刊论文
A comprehensive investigation on the phase transformation behavior and electrical properties of (Pb1
Electrical properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films on TiO2 buffer la
Low-temperature growth of (110)-preferred Pb0.97La0.02(Zr0.88Sn0.10Ti0.02)O3 antiferroelectric thin
Temperature and frequency dependent electrical properties of (Pb, La)(Zr, Sn, Ti)O3 antiferroelectri
Dielectric tunable properties and relaxor behavior of (Pb0.5Ba0.5)ZrO3 thin films
Improved dielectric properties of (110)-preferred (Pb, La) (Zr, Sn, Ti)O3 antiferroelectric thin fil
Phase transformation and electric field tunable pyroelectric behavior of PLZST and PNZST antiferroel
Dielectric properties of Pb0.97La0.02(Zr0.87-xSnxTi0.13) thin films with compositions near the morph
Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb, Zr,Sn,Ti)O3 antiferroelectric thin
The electrical properties and phase transformation of PLZST 2/85/13/2 antiferroelectric thin films o
Composition-dependent electrical properties of (Pb, La)(Zr, Sn, Ti)O3 antiferroelectric thin films g
Preparation of highly (111)-oriented (Pb,La)(Zr,Sn,Ti)O3 (PLZST) antiferroelectric thin films by mod